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Electromagnetic Modeling Student Worker

Intel Β· MEX - Zapopan, Mexico

Full-time Posted 4 days ago

About this role

Job Details: Job Description: This position requires candidates to upload a resume in English; you are welcome to upload multiple versions of your resume if you prefer but an English version of your resume will be required to be considered for this position. The IOTS Pathfinding team is seeking a motivated and detail-oriented Engineer Intern to join our team in Guadalajara. In this role, you will support readiness and scalability for next-generation high-speed I/O technologies (PCI Express, UPI, CXL, USB) by assisting in technology pathfinding projects critical to future server platforms and Intel's data center leadership

You will develop and validate high-fidelity 3D electromagnetic (EM) model libraries for key interconnects-such as connectors, PCB vias, and high-speed cables-using industry-standard tools (e.g., Ansys HFSS, CST, ADS) to support signal integrity (SI) and power integrity (PI) evaluations. You will collaborate with engineers across Intel's I/O community and, as needed, interact with external industry organizations. Under mentorship, you will help execute parametric studies and optimization sweeps to explore SI/PI performance and manufacturability tradeoffs, assist with correlating simulations to lab/bench measurements, and contribute to documentation such as a best-practices / design-guidelines report and reusable modeling workflows for design teams

Key Responsibilities Assist in building, parameterizing, and organizing 3D EM models for connectors, PCB via structures, and high-speed cable/interconnect assemblies using tools such as Ansys HFSS, CST Microwave Studio, and/or ADS. Run defined parametric studies (geometry, materials, plating/roughness, stack-up, launch transitions) to quantify impact on SI/PI metrics (e.g., insertion/return loss, impedance, mode conversion, crosstalk, resonance behavior) and summarize results. Support model validation and correlation by helping compare EM results to lab/bench data (e.g., VNA measurements, TDR, fixture de

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